AO4407 30V P-Channel MOSFET
General Description
Product Summary
The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
ID (at VGS=-20V)
-30V -12A
RDS(ON) (at VGS=-20V)
< 13mΩ
VDS
RDS(ON) (at VGS =-10V)
< 14mΩ
RDS(ON) (at VGS =-5V)
< 30mΩ
* RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D
Bottom View
D D
G
G S
S
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current
VGS TA=25°C
Units V
±25
V
-12
ID
TA=70°C
Maximum -30
-10
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAS, IAR
26
A
Avalanche energy L=0.3mH C TA=25°C
EAS, EAR
101
mJ
Power Dissipation B
Junction and Storage Temperature Range
Rev.14.0: July 2013
3.1
PD
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
-60
TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State
W
2
RθJA RθJL
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-55 to 150
Typ 31 59 16
°C
Max 40 75 24
Units °C/W °C/W °C/W
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AO4407
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
-1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
±100
nA
-2.8
V
VGS=-20V, ID=-12A
8.5
13
mΩ
VGS=-10V, ID=-12A
10
14
12
19 30
A
Static Drain-Source On-Resistance
VGS=-5V, ID=-7A
19
gFS
Forward Transconductance
VDS=-5V, ID=-10.5A
27
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
-0.72
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
24 VGS=-10V, VDS=-15V, ID=-12A
VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω
mΩ S V
-4
A
2600
pF
370 1.2
mΩ
-1
pF
295
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
µA
-2.25
RDS(ON)
Crss
Units V
VDS=-30V, VGS=0V
IGSS
Coss
Max
pF
2.4
3.6
30
36
Ω nC
4.6
nC
10
nC
11
ns
9.4
ns
24
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-12A, dI/dt=100A/µs
30
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
22
12
ns 40
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.14.0: July 2013
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AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80
80 -10V
-6V
VDS=-5V
-5V 60
-ID(A)
-ID (A)
60
-4.5V
40
125°C
20
-4V
20
40
25°C
VGS=-3.5V 0
0 0
1
2
3
4
1
5
3
4
5
6
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance
1.6
25 VGS=-5V RDS(ON) (mΩ Ω)
2
20 15 10 VGS=-10V 5 0
VGS=-10V ID=-12A
1.4
17 5 2 10
1.2
1
VGS=-5V ID=-7A
0.8 0
0
5
10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
30
1.0E+01 ID=-12A 1.0E+00
25
40
20
125°C
IS (A)
RDS(ON) (mΩ Ω)
1.0E-01 125°C
1.0E-02
15 25°C
1.0E-03 25°C
10
1.0E-04 1.0E-05
5 2
6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.14.0: July 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000
10 VDS=-15V ID=-12A
2500 Ciss Capacitance (pF)
-VGS (Volts)
8
6
4
2
2000 1500 1000 Coss 500
0
Crss
0 0
5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics
30
0
1000.0
5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
10000 TA=25°C
10.0
1000
10µs 100µs
RDS(ON) limited
Power (W)
ID (Amps)
100.0
1ms 1.0
10ms
10
TJ(Max)=150°C TA=25°C
0.1
100
10s DC 1
0.0 0.01
0.1
1 VDS (Volts)
10
0.00001
100
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.14.0: July 2013
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Page 4 of 5
AO4407
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev.14.0: July 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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