AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch.
VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 4.5V) RDS(ON) < 200mΩ (VGS = 2.5V)
SOT23 Top View
D
Bottom View D
D
G
S
G S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current
TA=25°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
W
0.8
TJ, TSTG
t ≤ 10s Steady-State Steady-State
A
1.25 -55 to 150
Symbol A
V
10
PD
TA=70°C
A
±12 1.7
ID IDM
B
Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
Units V
2.1
TA=70°C TA=25°C
Power Dissipation
Maximum 55
RθJA RθJL
Typ 75 115 48
°C
Max 100 150 60
Units °C/W °C/W °C/W
AO3422
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Min
Conditions ID=10mA, VGS=0V
1
IGSS
Gate-Source leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
10
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
VGS=4.5V, ID=2.1A TJ=125°C VGS=2.5V, ID=1.5A gFS
Forward Transconductance
Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current
VDS=5V, ID=2.1A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge
5 1.3
±100
nA
2
V
125
160
175
210
157
200
mΩ
1
V
1
A
300
pF
11 0.78
VGS=4.5V, VDS=27.5V, ID=2.1A
mΩ
S
31
pF
12.6 VGS=0V, VDS=0V, f=1MHz
µA
A
214 VGS=0V, VDS=25V, f=1MHz
Units V
VDS=44V, VGS=0V
Zero Gate Voltage Drain Current
VSD
Max
55
IDSS
IS
Typ
pF
1.3
3
Ω
2.6
3.3
nC
0.6
nC
Qgd
Gate Drain Charge
0.8
nC
tD(on)
Turn-On DelayTime
2.3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=2.1A, dI/dt=100A/µs
20
Qrr
Body Diode Reverse Recovery Charge IF=2.1A, dI/dt=100A/µs
17
VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω
2.4
ns
16.5
ns
2
ns 30
ns nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: Sep 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8
10 10V
3.5V
8 6
2.5V
ID(A)
ID (A)
VDS=5V
6
5V
4
4
125°C 2
VGS=2V
2
25°C
0
0 0
1
2
3
4
5
1
1.25
1.75
2
2.25
2.5
VGS(Volts) Figure 2: Transfer Characteristics
200
2
180
1.8
Normalized On-Resistance
RDS(ON) (mΩ)
VDS (Volts) Fig 1: On-Region characteristics
1.5
VGS=2.5V 160 140 120 VGS=4.5V
VGS=4.5
1.6 1.4
VGS=2.5V
1.2 1
100 0
1
2
3
4
0.8
5
0
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01
360
1E+00
310
1E-01
260 IS (A)
RDS(ON) (mΩ)
125°C
ID=2.3A
125°C 210 160
1E-02 25°C
1E-03
110
25°C
1E-04
60 1E-05
10 0
2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
1.4
AO3422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400
5
360 VDS=27.5V ID=2.1A
Ciss
320 Capacitance (pF)
VGS (Volts)
4 3 2
280 240 200 160 Coss
120
Crss
80
1
40 0
0 0
1
2 Qg (nC) Figure 7: Gate-Charge Characteristics
0
3
Power (W)
ID (Amps)
10ms
20
25
30
TJ(Max)=150°C TA=25°C
100µs 0.1s
15
15
TJ(Max)=150°C TA=25°C
10.0
1.0
10
VDS (Volts) Figure 8: Capacitance Characteristics
100.0 RDS(ON) limited
5
1ms
1s
10
5
10s DC 0.1 0.1
1
10
100
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
ZθJA Normalized Transient Thermal Resistance
10
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100°C/W
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse 0.01 0.00001
0.0001
0.001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
AO3422 c Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs Ig Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
Rg
90% Vdd
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
Vdd
I AR
Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT
Vds -
Isd
Vgs
L
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
VDC
-
IF
trr
dI/dt IRM
Vds
Vdd
