Philips Semiconductors
Product Specification
PowerMOS transistor
GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
PINNING - TO220AB PIN
QUICK REFERENCE DATA SYMBOL
PARAMETER
MAX.
MAX.
UNIT
VDS ID Ptot Tj RDS(ON)
BUK455 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance
-100A 100 26 125 175 0.08
-100B 100 23 125 175 0.1
V A W ˚C Ω
PIN CONFIGURATION
DESCRIPTION
1
gate
2
drain
3
source
tab
BUK455-100A/B
SYMBOL d
tab
g
drain s
1 23
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS VDGR ±VGS
Drain-source voltage Drain-gate voltage Gate-source voltage
RGS = 20 kΩ -
-
100 100 30
V V V
ID ID IDM
Drain current (DC) Drain current (DC) Drain current (pulse peak value)
Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C
-
Ptot Tstg Tj
Total power dissipation Storage temperature Junction Temperature
Tmb = 25 ˚C -
- 55 -
-100A 26 18 104
-100B 23 16 92
A A A
125 175 175
W ˚C ˚C
THERMAL RESISTANCES SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to mounting base Thermal resistance junction to ambient
Rth j-a
April 1993
CONDITIONS
1
MIN.
TYP.
MAX.
UNIT
-
-
1.2
K/W
-
60
-
K/W
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-100A/B
STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance
VGS = 0 V; ID = 0.25 mA
100
-
-
V
VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK455-100A BUK455-100B ID = 13 A
2.1 -
3.0 1 0.1 10 0.07 0.08
4.0 10 1.0 100 0.08 0.1
V µA mA nA Ω Ω
MIN.
TYP.
MAX.
UNIT
VGS(TO) IDSS IDSS IGSS RDS(ON)
DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 13 A
7.0
13.5
-
S
Ciss Coss Crss
Input capacitance Output capacitance Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
1650 350 100
2000 500 150
pF pF pF
td on tr td off tf
Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time
VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω
-
15 25 100 50
30 40 160 80
ns ns ns ns
Ld
Internal drain inductance
-
3.5
-
nH
Ld
Internal drain inductance
-
4.5
-
nH
Ls
Internal source inductance
Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad
-
7.5
-
nH
MIN.
TYP.
MAX.
UNIT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
IDR
-
-
-
26
A
IDRM VSD
Continuous reverse drain current Pulsed reverse drain current Diode forward voltage
IF = 26 A ; VGS = 0 V
-
1.3
104 1.7
A V
trr Qrr
Reverse recovery time Reverse recovery charge
IF = 26 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V
-
90 0.8
-
ns µC
MIN.
TYP.
MAX.
UNIT
-
-
100
mJ
AVALANCHE LIMITING VALUE Tmb = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive unclamped inductive turn-off energy
ID = 26 A ; VDD ≤ 50 V ; VGS = 10 V ; RGS = 50 Ω
April 1993
2
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
Normalised Power Derating
PD%
120
BUK455-100A/B
Zth j-mb / (K/W)
10
BUKx55-lv
110 100 90
D=
1
0.5
80
0.1
0.2 0.1 0.05 0.02
0.01
0
70 60 50 40 30
tp
PD
D=
20 10 0 0
20
40
60
80 100 Tmb / C
120
140
160
Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
120
1E-05
1E-03 t/s
1E-01
1E+01
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
t
T
0.001 1E-07
180
tp T
50
ID / A
BUK455-100A 20
110 100
15 10
40
90
8
7
80
30
70
VGS / V =
60 50
6
20
40 30
5
10
20 10
0
0 0
20
40
60
80 100 Tmb / C
120
140
160
180
2
4
6
ID / A
0.5
BUK455-100A
RDS(ON) / Ohm 4.5
5
5.5
0.4 ID
S/
N)
D =V
6
A
VGS / V =
B
0.3
tp = 10 us
O S(
6.5
RD
7
100 us
0.2
7.5
10 1 ms DC
20 0
1 100
10
1000
0
20
40 ID / A
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp
April 1993
10
0.1
10 ms 100 ms 1
10
Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS
BUK455-100A,B
100
8
VDS / V
Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
1000
4 0
Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS
3
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-100A/B
ID / A
50
VGS(TO) / V
BUK455-100A
max.
25
Tj / C =
4
150
40 typ. 3
30 min. 2
20 1
10
0
0
0
2
4
6
8
10
-60
-20
20
VGS / V
100
140
180
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj gfs / S
60 Tj / C
BUK455-100A
SUB-THRESHOLD CONDUCTION
ID / A
1E-01
15 1E-02
10
2%
1E-03
typ
98 %
1E-04
5 1E-05
1E-06
0 0
20
40
0
1
2 VGS / V
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V
2.4
4
Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
3
10000
C / pF
BUK4y5-100
2.2 2.0 1.8
Ciss
1.6
1000
1.4 1.2
Coss
1.0 0.8
100
Crss
0.6 0.4 0.2 0 -60
-20
20
60 Tj / C
100
140
10
180
0
40 VDS / V
Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 13 A; VGS = 10 V
April 1993
20
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
4
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-100A/B
BUK455-100
VGS / V
12
120
WDSS%
110
VDS / V =20
10
100 90
80
80
8
70 60
6
50 40
4
30 20
2
10 0
0 0
10
20 QG / nC
20
30
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 26 A; parameter VDS
60
IF / A
40
60
80
100 120 Tmb / C
140
160
180
Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 26 A
BUK455-100A
VDD
+
50
L VDS
40
-
VGS
30 Tj / C = 150
-ID/100
25
T.U.T.
0
20 10
RGS
R 01 shunt
0 0
1 VSDS / V
2
Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
April 1993
5
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-100A/B
MECHANICAL DATA Dimensions in mm
4,5 max
Net Mass: 2 g
10,3 max 1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min 1,3 max 1 2 3 (2x)
0,9 max (3x)
2,54 2,54
0,6 2,4
Fig.17. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8".
April 1993
6
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-100A/B
DEFINITIONS Data sheet status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification
This data sheet contains final product specifications.
Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1993
7
Rev 1.100
