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Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYM...

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Philips Semiconductors

Product Specification

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

PINNING - TO220AB PIN

QUICK REFERENCE DATA SYMBOL

PARAMETER

MAX.

MAX.

UNIT

VDS ID Ptot Tj RDS(ON)

BUK455 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance

-100A 100 26 125 175 0.08

-100B 100 23 125 175 0.1

V A W ˚C Ω

PIN CONFIGURATION

DESCRIPTION

1

gate

2

drain

3

source

tab

BUK455-100A/B

SYMBOL d

tab

g

drain s

1 23

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS VDGR ±VGS

Drain-source voltage Drain-gate voltage Gate-source voltage

RGS = 20 kΩ -

-

100 100 30

V V V

ID ID IDM

Drain current (DC) Drain current (DC) Drain current (pulse peak value)

Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C

-

Ptot Tstg Tj

Total power dissipation Storage temperature Junction Temperature

Tmb = 25 ˚C -

- 55 -

-100A 26 18 104

-100B 23 16 92

A A A

125 175 175

W ˚C ˚C

THERMAL RESISTANCES SYMBOL

PARAMETER

Rth j-mb

Thermal resistance junction to mounting base Thermal resistance junction to ambient

Rth j-a

April 1993

CONDITIONS

1

MIN.

TYP.

MAX.

UNIT

-

-

1.2

K/W

-

60

-

K/W

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK455-100A/B

STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance

VGS = 0 V; ID = 0.25 mA

100

-

-

V

VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK455-100A BUK455-100B ID = 13 A

2.1 -

3.0 1 0.1 10 0.07 0.08

4.0 10 1.0 100 0.08 0.1

V µA mA nA Ω Ω

MIN.

TYP.

MAX.

UNIT

VGS(TO) IDSS IDSS IGSS RDS(ON)

DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

gfs

Forward transconductance

VDS = 25 V; ID = 13 A

7.0

13.5

-

S

Ciss Coss Crss

Input capacitance Output capacitance Feedback capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz

-

1650 350 100

2000 500 150

pF pF pF

td on tr td off tf

Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time

VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω

-

15 25 100 50

30 40 160 80

ns ns ns ns

Ld

Internal drain inductance

-

3.5

-

nH

Ld

Internal drain inductance

-

4.5

-

nH

Ls

Internal source inductance

Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad

-

7.5

-

nH

MIN.

TYP.

MAX.

UNIT

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

IDR

-

-

-

26

A

IDRM VSD

Continuous reverse drain current Pulsed reverse drain current Diode forward voltage

IF = 26 A ; VGS = 0 V

-

1.3

104 1.7

A V

trr Qrr

Reverse recovery time Reverse recovery charge

IF = 26 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V

-

90 0.8

-

ns µC

MIN.

TYP.

MAX.

UNIT

-

-

100

mJ

AVALANCHE LIMITING VALUE Tmb = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

WDSS

Drain-source non-repetitive unclamped inductive turn-off energy

ID = 26 A ; VDD ≤ 50 V ; VGS = 10 V ; RGS = 50 Ω

April 1993

2

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

Normalised Power Derating

PD%

120

BUK455-100A/B

Zth j-mb / (K/W)

10

BUKx55-lv

110 100 90

D=

1

0.5

80

0.1

0.2 0.1 0.05 0.02

0.01

0

70 60 50 40 30

tp

PD

D=

20 10 0 0

20

40

60

80 100 Tmb / C

120

140

160

Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb)

120

1E-05

1E-03 t/s

1E-01

1E+01

Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T

Normalised Current Derating

ID%

t

T

0.001 1E-07

180

tp T

50

ID / A

BUK455-100A 20

110 100

15 10

40

90

8

7

80

30

70

VGS / V =

60 50

6

20

40 30

5

10

20 10

0

0 0

20

40

60

80 100 Tmb / C

120

140

160

180

2

4

6

ID / A

0.5

BUK455-100A

RDS(ON) / Ohm 4.5

5

5.5

0.4 ID

S/

N)

D =V

6

A

VGS / V =

B

0.3

tp = 10 us

O S(

6.5

RD

7

100 us

0.2

7.5

10 1 ms DC

20 0

1 100

10

1000

0

20

40 ID / A

VDS / V

Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp

April 1993

10

0.1

10 ms 100 ms 1

10

Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS

BUK455-100A,B

100

8

VDS / V

Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V

1000

4 0

Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS

3

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK455-100A/B

ID / A

50

VGS(TO) / V

BUK455-100A

max.

25

Tj / C =

4

150

40 typ. 3

30 min. 2

20 1

10

0

0

0

2

4

6

8

10

-60

-20

20

VGS / V

100

140

180

Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj gfs / S

60 Tj / C

BUK455-100A

SUB-THRESHOLD CONDUCTION

ID / A

1E-01

15 1E-02

10

2%

1E-03

typ

98 %

1E-04

5 1E-05

1E-06

0 0

20

40

0

1

2 VGS / V

ID / A

Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V

2.4

4

Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Normalised RDS(ON) = f(Tj)

a

3

10000

C / pF

BUK4y5-100

2.2 2.0 1.8

Ciss

1.6

1000

1.4 1.2

Coss

1.0 0.8

100

Crss

0.6 0.4 0.2 0 -60

-20

20

60 Tj / C

100

140

10

180

0

40 VDS / V

Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 13 A; VGS = 10 V

April 1993

20

Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

4

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK455-100A/B

BUK455-100

VGS / V

12

120

WDSS%

110

VDS / V =20

10

100 90

80

80

8

70 60

6

50 40

4

30 20

2

10 0

0 0

10

20 QG / nC

20

30

Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 26 A; parameter VDS

60

IF / A

40

60

80

100 120 Tmb / C

140

160

180

Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 26 A

BUK455-100A

VDD

+

50

L VDS

40

-

VGS

30 Tj / C = 150

-ID/100

25

T.U.T.

0

20 10

RGS

R 01 shunt

0 0

1 VSDS / V

2

Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )

Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

April 1993

5

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK455-100A/B

MECHANICAL DATA Dimensions in mm

4,5 max

Net Mass: 2 g

10,3 max 1,3

3,7 2,8

5,9 min

15,8 max

3,0 max not tinned

3,0

13,5 min 1,3 max 1 2 3 (2x)

0,9 max (3x)

2,54 2,54

0,6 2,4

Fig.17. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8".

April 1993

6

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK455-100A/B

DEFINITIONS Data sheet status Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification

This data sheet contains final product specifications.

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

April 1993

7

Rev 1.100