Philips Semiconductors
Product specification
Triacs
BT136 series
GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
PINNING - TO220AB PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
QUICK REFERENCE DATA SYMBOL
PARAMETER
MAX. MAX. MAX. UNIT
VDRM
BT136BT136BT136Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current
500 500F 500G 500
600 600F 600G 600
800 800F 800G 800
V
4 25
4 25
4 25
A A
IT(RMS) ITSM
PIN CONFIGURATION
SYMBOL
tab
T2
tab
T1
G
1 23
main terminal 2
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL
PARAMETER
VDRM
Repetitive peak off-state voltages
IT(RMS) ITSM
RMS on-state current Non-repetitive peak on-state current
I2t dIT/dt
IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
CONDITIONS
MIN. -
full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+
over any 20 ms period
MAX. -500 5001
-600 6001
UNIT -800 800
V
-
4
A
-
25 27 3.1
A A A2s
-40 -
50 50 50 10 2 5 5 0.5 150 125
A/µs A/µs A/µs A/µs A V W W ˚C ˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. August 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT136 series
THERMAL RESISTANCES SYMBOL
PARAMETER
Rth j-mb
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
60
3.0 3.7 -
K/W K/W K/W
STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL
PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT VGT
On-state voltage Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
MIN.
BT136VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
TYP.
MAX.
UNIT
...
...F
...G
-
5 8 11 30
35 35 35 70
25 25 25 70
50 50 50 100
mA mA mA mA
-
7 16 5 7 5
20 30 20 30 15
20 30 20 30 15
30 45 30 45 30
mA mA mA mA mA
0.25
1.4 0.7 0.4
1.70 1.5 -
V V V
-
0.1
0.5
mA
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL
PARAMETER
dVD/dt
Critical rate of rise of off-state voltage
dVcom/dt
Critical rate of change of commutating voltage
tgt
Gate controlled turn-on time
August 1997
CONDITIONS BT136VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs
2
... 100
...F 50
...G 200
250
-
V/µs
-
-
10
50
-
V/µs
-
-
-
2
-
µs
Rev 1.200
Philips Semiconductors
Product specification
Triacs
8
BT136 series
BT136
Ptot / W
Tmb(max) / C
5
101
IT(RMS) / A
BT136
104
7 6
= 180
1
107 C
4 107
120 5
110
90 60
4
3
113
30 3
116
2
119
1
122
2
1
0
0
1
2
3 IT(RMS) / A
125 5
4
0 -50
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
1000
50 Tmb / C
100
150
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
BT136
ITSM / A
0
12
BT136
IT(RMS) / A
ITSM
IT
10 T
time
8
Tj initial = 25 C max 100
6 dIT /dt limit
4 T2- G+ quadrant
2 10 10us
100us
1ms T/s
10ms
0 0.01
100ms
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
30
ITSM / A
BT136
T
Tj initial = 25 C max
1.2 1
10
0.8
5
0.6
1
10 100 Number of cycles at 50Hz
0.4 -50
1000
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
August 1997
BT136
1.4
time
15
0
VGT(Tj) VGT(25 C)
I TSM
IT
20
10
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C.
1.6
25
0.1 1 surge duration / s
0
50 Tj / C
100
150
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs
3
BT136 series
IGT(Tj) IGT(25 C)
Tj = 125 C Tj = 25 C
T2+ G+ T2+ GT2- GT2- G+
2.5 2
8
1
4
0.5
2
50 Tj / C
100
0
150
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
IL(Tj) IL(25 C)
max
Vo = 1.27 V Rs = 0.091 ohms
6
0
typ
10
1.5
0 -50
BT136
IT / A
12
BT136
0
0.5
1
1.5 VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
10
TRIAC
BT136
Zth j-mb (K/W)
unidirectional
2.5
bidirectional 1
2 1.5 0.1
1
P D
tp
0.5
t
0 -50
0
50 Tj / C
100
0.01 10us
150
IH(Tj) IH(25C)
1ms
10ms
0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj.
3
0.1ms
1000
TRIAC
dVcom/dt (V/us) off-state dV/dt limit BT136...G SERIES
2.5
BT136 SERIES
100
2
BT136...F SERIES
1.5 10
1 0.5 0 -50
dIcom/dt = 5.1 A/ms
0
50 Tj / C
100
1
150
3
50
2.3
1.8 100
1.4 150
Tj / C
Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.
August 1997
0
3.9
4
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT136 series
MECHANICAL DATA Dimensions in mm
4,5 max
Net Mass: 2 g
10,3 max 1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min 1,3 max 1 2 3 (2x)
0,9 max (3x)
2,54 2,54
0,6 2,4
Fig.13. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
August 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT136 series
DEFINITIONS Data sheet status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification
This data sheet contains final product specifications.
Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1997
6
Rev 1.200
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