Under the Hood of Flyback SMPS Designs PPT Presentation

Power Supply Design Seminar Power Seminar topics and online power-training modules are available at: power.ti.com/seminars Topic 1 Presentation: Under...

8 downloads 512 Views 1MB Size
Power Supply Design Seminar Topic 1 Presentation:

Under the Hood of Flyback SMPS Designs Reproduced from 2010 Texas Instruments Power Supply Design Seminar SEM1900, Topic 1 TI Literature Number: SLUP254 © 2010, 2011 Texas Instruments Incorporated

Power Seminar topics and online powertraining modules are available at: power.ti.com/seminars

Topic 1

Under the Hood of Flyback SMPS Designs

Jean Picard

SLUP254

Agenda 1. Basics of Flyback Topology 2 Impact of Transformer Design on Power Supply 2. Performance 3. Power Supply Current Limiting 4. Summary

Texas Instruments—2010 Power Supply Design Seminar

1-2 SLUP254

Transfer of Energy • FET turns ON – Voltage across primary magnetizing inductance ≅ Vi • E Energy iis stored t d in i flyback fl b k transformer: Function of L, D and Ts

– Secondary y diode in blocking g state

IP Io +Vi

1:n2

– During commutation: Leakage energy absorbed by clamp circuit – Stored energy transferred to output through diode – If DCM operation operation, all the stored energy is transferred

Cla amp

• FET turns OFF

IP

- + +

Vo Iout

Vdrain

• Pulsating input and output currentt Texas Instruments—2010 Power Supply Design Seminar

1-3 SLUP254

Transfer of Energy • FET turns ON – Voltage across primary magnetizing inductance ≅ Vi

• Energy is stored in flyback transformer: Function of L, D and Ts

IP Io

– Secondary diode in blocking state

+V Vi

– During commutation: Leakage energy absorbed by clamp circuit – Stored energy transferred to output through diode – If DCM operation operation, all the stored energy is transferred

Io

1:n2 Clam mp

• FET turns OFF

IP

+

-

Vo Iout

Vdrain

• Pulsating input and output currentt Texas Instruments—2010 Power Supply Design Seminar

1-4 SLUP254

Transfer of Energy • FET turns ON O – Voltage across primary magnetizing inductance ≅ Vi

• Energy is stored in flyback transformer: Function of L, D and Ts

IP Io

– Secondary diode in blocking state

+Vi

– During commutation: Leakage energy absorbed by clamp circuit – Stored St d energy transferred t f d to t output through diode – If DCM operation, all the stored energy is transferred

1:n2 Clamp

• FET turns OFF O

Io

+

-

Vo Iout

Vdrain

• Pulsating input and output current

Texas Instruments—2010 Power Supply Design Seminar

1-5 SLUP254

Transfer of Energy • FET turns ON – Voltage across primary magnetizing inductance ≅ Vi

• Energy is stored in flyback transformer: Function of L, D and Ts

+Vi

1:n2

• FET turns OFF – During commutation: Leakage energy absorbed by clamp circuit – Stored energy transferred to output through diode – If DCM operation, all the stored energ is transferred energy

Clamp

– Secondary diode in blocking state

Vo Iout

Vdrain

• Pulsating input and output current

Texas Instruments—2010 Power Supply Design Seminar

1-6 SLUP254

CCM versus DCM • Continuous conduction mode (CCM) – Small ripple and rms current – Lower MOSFET conduction and turn-off loss – Lower core loss – Lower capacitors loss – Can have better “full load” efficiency – Smaller S ll EMI and d output t t filters filt

• Discontinuous conduction mode (DCM) – No diode reverse recovery loss – Lower inductance value

• May result in a smaller transformer

– Better “no no load load” efficiency – First-order system

Vdrain Primary MOSFET Primary C Current IP Secondary Current Io

Vo n2 + Vi

Ipk

Ipkmin

ΔIL

ΔILS S

(1 – D) x Ts

m2S

Io_avg _ g Time (t) Ts

Vdrain Primary MOSFET

D × Ts

Vo n2 + Vi

Vi Ipk

Primary Current IP

(1 – D) × Ts Idle Period

• Inherently stable

– No RHPZ p problem – Slope compensation not needed in CMC

D x Ts

T

Secondary Current Io

Texas Instruments—2010 Power Supply Design Seminar

Io_avg Time (t)

1-7 SLUP254

Right-Half-Plane Zero, CCM Operation Cllamp

– Effect of control action during ON time is delayed y until next switch turn OFF

– Phase decreases with increasing gain

f RPHZ =

(1 − D )

2

IP

-

+

Vo Iout

+

Vdrain

• Initial reaction is in opposite direction of desired correction ⇒ RHP Zero

1:n2

FET ON +Vi

× Vo

2πL × D × Iout × n 22

D ↔ Main M i switch it h d duty-cycle t l Texas Instruments—2010 Power Supply Design Seminar

1 2 1:n Clamp

• Energy is delivered during 1 – D

+Vi

Io

+

-

Vo Iout

Vdrain

FET OFF

1-8 SLUP254

RCD Clamp Circuit • During commutation primary-toprimary to secondary, the leakage energy is absorbed by the clamp circuit –

Rc la m p

+

– Rclamp dissipates the leakage energy and some magnetizing energy

+Vi

– The clamp capacitor ensures a low voltage ripple

Diode or Synchronous N1:N2 Rectifier Vc la m p IP Vdra in

– Use short connection with minimum loop area

• Vclamp is maximum at full load and minimum input voltage – Rclamp selected for a maximum drain voltage in worst case – Tradeoff between efficiency, peak drain voltage, output current limit and cross regulation (see ringing effect)

Vo

RS Clamp-Diode Forward Recovery Vi + Vc la m p Vdra in Primary MOSFET

Texas Instruments—2010 Power Supply Design Seminar

Leakage-Inductance Demagnetization Vi +

Vo n

1-9 SLUP254

Agenda 1. Basics of Flyback Topology 2 Impact of Transformer Design on Power 2. Supply Performance 3. Power Supply Current Limiting 4. Summary

Texas Instruments—2010 Power Supply Design Seminar

1-10 SLUP254

Transformer’s Leakage Inductance • Transformer’s Transformer s leakage inductance represented by Lleak2 – Primary winding is the closest to center gap





Vi

+

Clamp

Vmag1

+

+

IP

• Voltage spike on FET during commutation • Rate of rise of current is influenced byy leakage g inductance • Commutation primary-tosecondary is not instantaneous p on Vclamp and depends

Lm

+

+ Vleak2 –

Vmag2

IS

VD



During Primary-toSecondary Commutation

ø

+

Vout



W1

FET W2

• When FET turns OFF – Lleak2 opposes to IP decrease and IS increase – Magnetizing inductance works to maintain magnetizing current

Lleak2

N1:N2

Clamp Diode Forward Recovery

Leakage Inductance Demagnetization Current Circulates in Secondary y Winding(s) g( )

Vi + Vclamp

Vclamp

VFET

Leakage Inductance Resonates with Drain Capacitance

Vi + Vclamp

VFET

Cl Clamp C Capacitor it Voltage V lt

Vmag2

Clamp Capacitor Voltage

0V Vmag2 – VD – Vout

Vleak2

IP

Reduction in Magnetizing Current Due to Faster Commutation

IP

IS

IS Dtr

– Loss of volt-seconds

Lost Volt-Seconds

Low Clamp Voltage

Texas Instruments—2010 Power Supply Design Seminar

Dtr

High Clamp Voltage

1-11 SLUP254

Effects of Leakage Inductance • Clamp circuits and snubbers needed for primary FET and secondary rectifier(s) • Lower power-supply efficiency • Impact p on g gate-drive strategy gy if synchronous y rectifier is used • Higher g duty y cycle y and magnetizing g g current than expected p • Higher H-field radiated emission • High Hi h iimpactt on cross-regulation l ti

Texas Instruments—2010 Power Supply Design Seminar

1-12 SLUP254

How Leakage Can Be Minimized • Leakage inductance is a function of winding geometry geometry, number of turns and separation between primary and secondary – Minimize the separation between the primary and main secondary winding(s) – Interleave the primary and main secondary – Select a core with a long and narrow window L

L

W2 W1 W2 W1

W1 W2 W2 W1

W1 W2 W1 W2

W1 W2 W2 W1

Option 1

Option 2

• Leakage inductance is not lowered with a high permeability core • Having the winding tightly coupled to the core will not reduce it Texas Instruments—2010 Power Supply Design Seminar

1-13 SLUP254

Cross-Regulation – Overview • Multiple-output flyback topology is popular because of its simplicity and low cost • If the coupling is perfect, the turns ratio directly defines output voltages • In the real world, “perfect” coupling is not possible • This often results in poor cross-regulation

Texas Instruments—2010 Power Supply Design Seminar

1-14 SLUP254

Cross-Regulation Physical Model • Transformer windings cannot all be equally well coupled to the gap because of physical separation between them • Magnetic energy stored between the windings represented as leakage inductances • Model not applicable to any transformer geometry •C Can b become complex l if iinterleaving t l i iis used, d or if multiple lti l secondary windings are wound simultaneously (multifilar) • Not accurate in situation of lightly loaded secondary outputs • Good tool to understand how the common flyback transformer geometries work Texas Instruments—2010 Power Supply Design Seminar

1-15 SLUP254

Cross-Regulation Physical Model lW4

+ Vi –

Clamp

+ V3 –

lW2

+ V2 –

+ N1:N2

W4 W

N3

W3 W

lp

W2 W

lW3

W1 W Primary

+ V4 –

N4

FET

Basic Flyback Circuit lp –

Vi

+

Clamp

+

Lleak12

Vmag1 Lm

Transformer Construction Lleak34

Lleak23

I2

I3

N2:N3 IW33

I4

N2:N4 IW4

N1:N2 FET

+ V2 –

+ V3 –

+ V4 –

Transformer Physical Model

• This circuit is only applicable to the transformer windings stackup shown • Each leakage inductance considered is between two consecutive secondaries • Also called “Ladder model” Texas Instruments—2010 Power Supply Design Seminar

1-16 SLUP254

Flux Lines during Commutation Each Secondary Winding with Nominal Load • φm decreases during commutation

φm

• dφ/dt (decreasing) in each secondary winding d g is s limited ted by its ts output voltage o tage – Increasing current induced in W2 to W4 to maintain φm in the gap

e = −N ×

W2

dφ m dt

W1

W3 W4

L

• Leakage between W2 and W1 – W1’s voltage limited by clamp

• W1 closest to gap

During Primary-to-Secondary Commutation Current in All Windings

– Vclamp limits dφm/dt in the gap during commutation

• W2 is next to W1

– W2 limits the dφ/dt seen by W3 and W4 – W3 and W4 output voltage lower than without leakage

• Current commutates progressively from near to remote secondary windings Texas Instruments—2010 Power Supply Design Seminar

lp

I2 I3 I4

Secondary Currents During C Commutation t ti Based B d on Physical Ph i l Model M d l

1-17 SLUP254

Ringing Effect • High Hi h dV/dt when h main i switch it h tturns off ff if main i output t t iis h heavily il lloaded d d • Transformer leakage inductance and parasitic capacity ⇒ auxiliary secondary y voltage g tends to “ring” g • If auxiliary output fully loaded ⇒ this ringing is clamped • If lightly loaded ⇒ voltage overshoot with peak detector effect • Much higher (sometimes > 2 x nominal value!) auxiliary output voltage at light load – Primary clamp voltage has high impact on result

• Most existing transformer models fail to predict this • This effect can be mitigated (but not eliminated) – Minimize leakage inductance between secondary windings – Locate the highest power secondary(ies) closest to the primary

• Other solutions include a post-regulator, series resistor or minimum load Texas Instruments—2010 Power Supply Design Seminar

1-18 SLUP254

Cross-Regulation Example Auxiliary Output Lightly Loaded • W2 (high current output) heavily loaded, W4 lightly loaded – W4’s output received too much energy gy during g Phase 1 due to ringing – W2’s output did not receive enough energy

• At end of commutation ((Phase 1): ) – Σ{reflected secondary currents} Ù magnetizing current

• V4 went too high g – Phase 2: high dφ/dt (decreasing) in W4 • IW4 ⇒ 0 A rapidly

– IW2 increases to maintain φm in the gap

• After IW4 crosses 0 A, W2’s and W3’s di/dt change to maintain the downslope of the magnetizing current and flux

φm H×δ = ×δ = ∑ N×I A×μ

Texas Instruments—2010 Power Supply Design Seminar

I4_pk IW4 I3_pk

IW3

Effect of V3 Capacitors ESR

V3 I2_pk IW2 Vmag1 IP_pk

IP Phase 1

Phase 2

Phase 3

Time (t)

φm W2 W1

W3 W4

Phase 2: No Primary Current

1-19 SLUP254

Test Results 10 Ω R W3

VD D

VAW3

W3 ( 9T)

W4 ( 14T)

300 Ω

W4 W3 W6

W2

36 Ω

W1B

W6 (9T)

V6 R6

6.8 µF

Current Probe IW4

Current Transformer V Iprim V_I 100 1 100:1

W1A

Current Probe IW6

V4 6.8 µF

+Vi

R c la m p 15 kΩ

0.1 µF

Vc la m p MURS120

5V W1 ( 21T) IP

W2 ( 4T) IW2

Primary MOSFET

• Input voltage: 48 V

Current Transformer 1:100 V_Is e c 6.8 Ω 249 Ω

I5

To CS Input

V

To 5-V Filter and Load

Sync Rectifier

• 5-V 5 V output t t load: l d 0 A to t 5A • Auxiliary outputs: V6 ((10 V at 0 to 140 mA)) and V4 (18 V at 0 to 200 mA)

R4

• Switching frequency: 250 kHz • Primary magnetizing inductance: 70 µH

Texas Instruments—2010 Power Supply Design Seminar

1-20 SLUP254

Cross-Regulation Test Results with p Fully y Loaded Main Output IW6 (0.5 A/div) 2

IW4 (1 A/div)

IW6 (0.5 A/div) 2

IW4 (1 A/div)

4

4

IW2 (2.94 A/div)

IW2 (2.94 A/div) 1

1

Time (0.5 µs/div)

Time (0.5 µs/div)

V6 at 1 1.6 6W W, V4 at 2 2.5 5W W, I5 V = 5 A

V6 at 0 0.5 5W W, V4 at 3 3.6 6W W, I5 V = 5 A

• The two auxiliary outputs operate in DCM • Notice the change of slope of IW2 when IW4 or IW6 crosses 0 A Texas Instruments—2010 Power Supply Design Seminar

1-21 SLUP254

Cross-Regulation Test Results: Lightly Loaded Auxiliary y with Main Output p Fully y Loaded I5 V = 5 A, V4 at 0.3 W, Vclamp = 70 V

V6 (10 V/div)

12.4 V

I5 V = 5 A, V4 at 0.3 W, Vclampp = 70 V

V6 (10 V/div)

20.6 V

VW6 (10 V/div) V/di )

VW6 (10 V/div)

IW6 (200 mA/div)

Time ((1 µ µs/div))

V6 at 0.5 W

Time ((1 µ µs/div))

V6 at < 5 mW

• At minimum load, load V6 (10 V nominal) goes up to 20.6 20 6 V Texas Instruments—2010 Power Supply Design Seminar

1-22 SLUP254

Cross-Regulation Test Results with Main Output Fully Loaded : Impact of Clamp Voltage I5 V = 5 A, V4 at 0.3 W, Vclamp = 83 V

V6 (10 V/div)

14.4 V

I5 V = 5 A, V4 at 0.3 W,

V6 (10 V/div)

26 V

Vclamp = 83 V l

VW6 (10 V/div) V/di )

VW6 (10 V/div)

IW6 (200 mA/div)

Time (1 µs/div)

Time (1 µs/div)

V6 at 0.5 W

V6 at < 5 mW

• RCD resistor has been increased for higher Vclamp: 70 V ⇒ 83 V ⇒V6 increased significantly in both cases Texas Instruments—2010 Power Supply Design Seminar

1-23 SLUP254

Overload Test at Auxiliary Output: p of Leakage g Impact • There was no hiccup mode even at more than 3 A! • Th The overloaded l d d winding i di is unable to take all the energy because of leakage W3 having in leakage, fact a better coupling to primary than W6

IW4 (1 A/div)

I5 V = 0 A, V4 at 2.5 W, R6 = 1 Ω

4

3

VAW3 (20 V/div)

IW6 (2 A/div)

6.2-A Peak

2

– Enough energy delivered by W3 to VDD to maintain switching

Texas Instruments—2010 Power Supply Design Seminar

Time (0.5 µs/div)

1-24 SLUP254

Benefits of Good Cross-Regulation • Good control of auxiliary outputs in spite of load variations • Better control of gate drive voltage amplitude, amplitude less gate drive losses • Lower rms current in output capacitors, lower dissipation • May allow the controller to reach hiccup mode more easily when the main output is short-circuited for better protection – Not necessarily true if the short-circuit is applied to an auxiliary output!

Texas Instruments—2010 Power Supply Design Seminar

1-25 SLUP254

How Cross-Regulation can be Improved • The high current winding must have the best coupling to primary • Minimize leakage between all secondary windings • Optimize, p , not minimize,, the leakage g inductance of auxiliaryy windings g to p primary y • Use winding placement to control leakage inductance

W3

Primary B

W2B

W2A

Primary A

Primary B

W2B

W3

W2A

Primary A

W3

W2B

Primary B

W2A

Primary A

– Winding stackup – Spread each winding over the full width of the bobbin for better coupling If W3 is lightly loaded and W2 Better or is the highthan current main output.

• Operate main output in CCM • Try to avoid operating the auxiliary outputs in DCM. In some cases, consider using resistance in series with the diode • Consider winding more than one auxiliary secondary simultaneously (multifilar) • Lower clamp voltage may help

– Trade-off between cross regulation, efficiency, peak drain voltage and current limit – Some other types of clamp circuits may provide better results than the RCD clamp

Texas Instruments—2010 Power Supply Design Seminar

1-26 SLUP254

Impact of Transformer Design on Flyback Efficiency

• Multifilar or Litz wires when necessaryy • Interleaving • Select core shape for minimum number of layers

– Optimize the transformer turns ratio for best efficiency – Select CCM operation

300

275 250

Secondary RMS Current Squared at 48 V

225 200 175

200

Good Duty-Cycle Trade-Off with 48-V Input p

150 125

100

100 75 50

20 x Primary RMS Current Squared at 48 V

25 0

0

20

40 60 Duty Cycle ( %)

80

2 Secondary RMS S Curr ent Squared d (A )

– Minimize leakage inductance from primary to main (high (high-current) current) secondary – Minimize transformer high frequency conduction loss

20x Primar y RM MS Current Squared d (A2)

• Th The following f ll i guidelines id li can be b used d during d i ttransformer f design to optimize the converter efficiency 300

0 100

• Other factors also have an indirect impact on efficiency – Cross-regulation

• VDD rail used for gate drive • Output capacitors rms current

– Impact of fringing flux from gap • Worse with planar transformers

Texas Instruments—2010 Power Supply Design Seminar

1-27 SLUP254

Flyback and EMI IS

IP N1:N2

+

ICM





+

+Vi

Prim mary A

– Shields Vdrain E-field – Reduces R d iinterwinding t i di capacity it effect ff t on CE

• Minimize leakage for low H-field RE

• Center-gap transformer Texas Instruments—2010 Power Supply Design Seminar

+

Output to Chassis CM

• Better to start with end connected to primary MOSFET

• Interleaving reduces H-field RE but may increase effective ff ti P P-S S iinterwinding t i di capacitance it

Vout VD

FET

2

– Less if facing windings indings at same AC potential – Diode versus synchronous rectifier – Flyback ≠ Forward

Clamp

Other Secondary y

• Transformer and diode configuration impact effective capacitance

IDM

Secon ndary B

Vi



S

Secon ndary A

• Interwinding capacitance ⇒ CM CE

P

Prim mary C

– Use low Z caps, minimize loop areas – Output filter often required

ICM 2

Prim mary B

• Flyback ⇒ IP and IS pulsate



FET VD

Vout

+

1-28 SLUP254

Agenda 1. Basics of Flyback Topology 2 Impact of Transformer Design on Power Supply 2. Performance 3. Power Supply Current Limiting 4. Summary

Texas Instruments—2010 Power Supply Design Seminar

1-29 SLUP254

Power Supply Current Limiting – Overview • Current-limiting characteristic of power supply defines: – Output power beyond which output voltage falls out of regulation. Corresponds to the “output load-current li it” (Iout_LIM) limit” – Output current in overload situations • including short-circuits short circuits

• Current-limiting characteristic is influenced by parasitics – Turn-off delays, leakage inductance,…

Texas Instruments—2010 Power Supply Design Seminar

1-30 SLUP254

Understanding Current Limit – Flyback Power Supply with Peak CMC in CCM +Vi

Power Supply Controller –

PWM COMP ((From Error Amp)

+

VC _ LIM

Vo Iout

Primary Current

D x Ts

RSC

Secondary Current

R

I_SENSE VC

Io

Clamp

Slope Comp

Clock Ramp

1:n2

C

Rs

ΔIL

IA _LIM

Ipk_LIM

m2S

I o_avg

(1 – D) x Ts Time (t)

Just at Current Limit, Output Begins to Fall Out of Regulation

CurrentSense Filter

• Ipk_LIM is i th the primary i peak k current limit • Io_avg p current o avg is the output • If short-circuit, Io_avg can be much higher than when current limit has just been reached

Ipk_LIM

Primary Current

D x Ts

Secondary Current

I o_avg (1 – D) x Ts Time (t)

Output Short Circuit

Iout = Io _ avg =

Texas Instruments—2010 Power Supply Design Seminar

IA × (1 − D ) n2 1-31 SLUP254

Current-Limit Model – Basic Representation • Peak CMC in CCM, fixed switching frequency I pk =

m2 m1

ΔIL

VC RS

IA (Average Magnetizing Current))

D × Ts Gate Control

Neglecting DC voltage drops:

Vo ΔI L ≈ m2 = (1 − D ) × TS n 2 × L Texas Instruments—2010 Power Supply Design Seminar

Vo D= n 2 × Vi + Vo 1-32 SLUP254

Influence of Input DC Voltage on Output Load Current Limit – Impact of Feedforward

Power Supply Controller

PWM COMP (From Error Amp)

+

Io

10

Vo Iout

Clamp

Slope Comp

Clock Ramp



1:n2

RSC R

I_SENSE VC

C

Rs

VC _ LIM

Output Loa ad Current L imit (A)

+Vi

Rff Feedforward

If Vi ↑ ⇒ (1 – D) ↑ ⇒ Iout_LIM increases

9

Without Feedforward

8 7 With Feedforward

6 5

20

25

30

35 40 45 Input Voltage(V)

50

55

• With feedforward, output load current limit becomes almost independent of input voltage ⇒ Better control during overload, less stress on power circuitry ⇒ Power limit ⇒ Cost C t and/or d/ size i reduction d ti • Feedforward also improves line noise rejection Texas Instruments—2010 Power Supply Design Seminar

1-33 SLUP254

Current Limit Model – With Feedforward VC K ff × V i

R S × I pk

RS × m 2 RS × g g Magnetizing Current)

RS × m1

RS × I A

D × Ts Gate Control

• Kff x Vi is the feedforward contribution

– Subtracting it from Vc is identical to adding it to current feedback

Texas Instruments—2010 Power Supply Design Seminar

1-34 SLUP254

Current Limit Model – Adding Slope Compensation Slope Compensation (Clock Ramp) – m0 x(Ts Tdis) 2

m0

K ff × V i

VC

RS × I A RS × m2

RS × IL_ pk m in D × Ts 2

R S × m1 Tdis

D × Ts Gate Control

• Slope compensation to avoid subharmonic oscillation at duty-cycle duty cycle close to or higher than 50% • For easier understanding, slope compensation contribution subtracted from Vc. – Equivalent to slope compensation added to current feedback – In that circuit representation, the slope compensation is capacitively-coupled

Texas Instruments—2010 Power Supply Design Seminar

1-35 SLUP254

Current Limit Model – With all Delays, Slope Compensation p and Feedforward • For a more accurate, parasitics must be included in the analysis • Parasitic delays – RC filter time delay – Turn off delay, including current comparator and gate drive – FET turn-on delay from onset of slope compensation ramp

• See Topic 1, Appendix A, in the Seminar Manual for detailed equations

Texas Instruments—2010 Power Supply Design Seminar

1-36 SLUP254

Influence of Transformer Leakage on Output p Load Current Limit • Rate of rise of current is influenced by leakage, commutation primary-tosecondary is not instantaneous ⇒ Loss of volt-seconds (also influenced by the clamp voltage) ⇒ Duty-cycle and average magnetizing current have to increase to maintain the output voltage g conduction loss ⇒ Higher ⇒ Higher transformer peak current than expected -> Iout_LIM lower than expected

• Leakage inductance helps however to keep control of the output current in output short-circuit situation



Vi

+

Clamp



Ideal Xfmr Lleak2 N1:N2 + Vleak2 –

+



Vmag1

+

IP

Lm

Vmag2

VD

+ Vout



FET

IP IS

Lost Volt-Seconds

Vi × D new ≈ Vclamp × D tr +

Texas Instruments—2010 Power Supply Design Seminar

+

IS

Dtr

Vo × (1 − D new − D tr ) n2 1-37 SLUP254

Current Limit During Overload – Example with Combined Effects

– Short-circuit: output current much higher than at onset of current limit

• Parasitic turn off delays may result in an out of control current if volt-seconds balance is not possible at the transformer – Transformer’s leakage i d t inductance h helps l tto maintain i t i that balance – If no leakage, the imbalance occurs starting g at Vo1 – With leakage, the imbalance occurs only from Vo2

Assuming no hiccup mode

25

Outpu ut Current (A)

• In overload: Output current increases ⇒ output voltage decreases

20

Without Leakage With Leakage

15

10

5

5

4.5

Vo _ short n2

Texas Instruments—2010 Power Supply Design Seminar

4

(

3.5

3 2.5 2 1.5 Output Voltage (V)

1

0.5 0 Vo1 Vo2 Short Circuit

)

× TS − t del _ OFF − D tr × TS = Vi × t del × D tr × TS d l _ OFF − Vclamp l 1-38 SLUP254

Summary • Th The flflyback b k power ttransformer f iis th the kkey element l t off th the converter, for optimum efficiency and cross-regulation • Parasitics ha have e a strong infl influence ence on flflyback back con converter’s erter’s behavior, particularly under overload or short-circuit conditions • The primary clamp circuit design is a trade-off between: – – – –

Efficiency Peak drain voltage Output current limit Cross regulation Cross-regulation

• Simple feedforward technique can be used to optimize the converter and the system, lowering worst-case worst case components stress and reducing the overall cost and size Texas Instruments—2010 Power Supply Design Seminar

1-39 SLUP254

TI Worldwide Technical Support Internet TI Semiconductor Product Information Center Home Page support.ti.com

TI E2E™ Community Home Page e2e.ti.com

Product Information Centers Americas Phone

+1(972) 644-5580

Japan

Asia

Brazil

Phone

0800-891-2616

Mexico

Phone

0800-670-7544

Phone Domestic 0120-92-3326 Fax International +81-3-3344-5317 Domestic 0120-81-0036

Phone International +91-80-41381665 Domestic Toll-Free Number Note: Toll-free numbers do not support mobile and IP phones. Australia 1-800-999-084 China 800-820-8682 Hong Kong 800-96-5941 India 1-800-425-7888 Indonesia 001-803-8861-1006 Korea 080-551-2804 Malaysia 1-800-80-3973 New Zealand 0800-446-934 Philippines 1-800-765-7404 Singapore 800-886-1028 Taiwan 0800-006800 Thailand 001-800-886-0010 Fax +8621-23073686 Email [email protected] or [email protected] Internet support.ti.com/sc/pic/asia.htm



Fax Internet/Email

+1(972) 927-6377 support.ti.com/sc/pic/americas.htm

Europe, Middle East, and Africa Phone European Free Call International Russian Support

00800-ASK-TEXAS (00800 275 83927) +49 (0) 8161 80 2121 +7 (4) 95 98 10 701

Note: The European Free Call (Toll Free) number is not active in all countries. If you have technical difficulty calling the free call number, please use the international number above. Fax Internet Direct Email

+(49) (0) 8161 80 2045 support.ti.com/sc/pic/euro.htm [email protected]

Internet/Email International support.ti.com/sc/pic/japan.htm Domestic www.tij.co.jp/pic

Important Notice: The products and services of Texas Instruments Incorporated and its subsidiaries described herein are sold subject to TI’s standard terms and conditions of sale. Customers are advised to obtain the most current and complete information about TI products and services before placing orders. TI assumes no liability for applications assistance, customer’s applications or product designs, software performance, or infringement of patents. The publication of information regarding any other company’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

A122010

The platform bar and E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners.

SLUP254

IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications. TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products

Applications

Audio

www.ti.com/audio

Communications and Telecom www.ti.com/communications

Amplifiers

amplifier.ti.com

Computers and Peripherals

www.ti.com/computers

Data Converters

dataconverter.ti.com

Consumer Electronics

www.ti.com/consumer-apps

DLP® Products

www.dlp.com

Energy and Lighting

www.ti.com/energy

DSP

dsp.ti.com

Industrial

www.ti.com/industrial

Clocks and Timers

www.ti.com/clocks

Medical

www.ti.com/medical

Interface

interface.ti.com

Security

www.ti.com/security

Logic

logic.ti.com

Space, Avionics and Defense

www.ti.com/space-avionics-defense

Power Mgmt

power.ti.com

Transportation and Automotive www.ti.com/automotive

Microcontrollers

microcontroller.ti.com

Video and Imaging

RFID

www.ti-rfid.com

OMAP Mobile Processors

www.ti.com/omap

Wireless Connectivity

www.ti.com/wirelessconnectivity TI E2E Community Home Page

www.ti.com/video

e2e.ti.com

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2011, Texas Instruments Incorporated